Flash memory controller, sd card device, method used in flash memory controller, and host device coupled to sd card device

ABSTRACT

A flash memory controller includes a processing circuit which is arranged for receiving a first command and a first portion address parameter, receiving a second command and a second portion address parameter, obtaining a complete address parameter by combining the first portion address parameter with the second portion address parameter, and performing a corresponding operation upon a flash memory according to the complete address parameter and a command type of the second command.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims priority of U.S. provisional application Ser.No. 62/610,937 filed on Dec. 28, 2017 and priority of U.S. provisionalapplication Ser. No. 62/619,930 filed on Jan. 22, 2018, which areentirely incorporated herein by reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The invention relates to a memory card communication scheme, and moreparticularly to a flash memory controller, a memory card, a method usedin a flash memory controller, and a host device connected to the memorycard.

2. Description of the Prior Art

Generally speaking, a currently developed communication scheme between aflash memory and a host device merely supports addressing of a 32-bitlength logical address space at most. The host device sends a commandand transmits an address parameter which merely indicates a 32-bitlength logical address at most. This causes that the maximum capacity ofthe flash memory is limited at 2 TB (Trillion byte), and a conventionalsecure digital (SD) memory card usually is arranged to report themaximum capacity of 2 TB to the host device.

However, with the development and progress of technology andapplications, for example, the requirement of image quality of a videorecording function of a mobile phone becomes higher and higher, andthere is a great probability that it is not enough for applications inthe future to limit the maximum capacity of a flash memory at 2 TB.Thus, for the flash memory having the maximum capacity more than 2 TB,it is needed to provide a novel communication scheme to make the SDmemory card be able to report the maximum capacity more than 2 TB to thehost device as well as be able to support addressing capability of morethan the 32-bit length logical address space.

SUMMARY OF THE INVENTION

Therefore one of the objectives of the invention is to provide a flashmemory controller, a memory card device, a method utilized in the flashmemory controller, and a host device connected to the memory card devicewhich can support a novel communication scheme to make the memory carddevice report a more than 2 TB capacity to the host device as well ascan support the capability of addressing of more than a 32-bit lengthlogical address space. The provide solution can be compatible with acurrently developed flash memory communication scheme. That is, theprovide solution can make a memory card device report a less than 2 TBcapacity to the host device as well as can support the capability ofaddressing of the 32-bit length logical address space.

According to embodiments of the invention, a flash memory controllerused in a secure digital (SD) memory card is disclosed. The flash memorycontroller is configured to couple to a flash memory within the SDmemory card via an internal bus of the SD memory card. The flash memorycontroller is configured to connect to a SD memory card driving circuitof a host device via at least one first external signal port of the SDmemory card and at least one second external signal port of the hostdevice. The flash memory controller comprises a processing circuit whichis used for: receiving a first command and a first partial addressparameter sent from the SD memory card driving circuit by the hostdevice wherein the first command and the first partial address parameterare transmitted via the at least one second external signal port and aCMD pin of an SD mode of the at least one first external signal port ofthe SD memory card sequentially; receiving a second command and a secondpartial address parameter sent from the SD memory card driving circuitby the host device wherein the second command and the second partialaddress parameter are transmitted via the at least one second externalsignal port and the CMD pin of the SD mode of the at least one firstexternal signal port of the SD memory card sequentially; combining toobtain a complete address parameter according to the first partialaddress parameter and the second partial address parameter; and,performing a processing operation upon the flash memory of the SD memorycard via the internal bus according to the complete address parameterand a command type of the second command, the processing operationcorresponding to the command type. The first command is one of commandsCMD22, CMD31, CMD39, CMD41, and CMD51. The command type of the secondcommand comprises a single data unit read of CMD 17, a single data unitwrite of CMD24, a multiple data unit read of CMD18, a multiple data unitwrite of CMD25, a command queue task assignment of CMD44 or CMD45, and ablock erase of CMD32, CMD33, or CMD38. The first partial addressparameter is a portion of most significant bits of the complete addressparameter, and the second partial address parameter is a portion ofleast significant bits of the complete address parameter. When receivinga start bit ‘0’ and a transmission bit ‘1’ at the CMD pin of the SD modeof the at least one first external signal port, the processing circuitis arranged for determining whether the host device is sending a commandcontent of a specific command from the SD memory card driving circuit tothe SD memory card and is used for receiving information of a commandtype and an address parameter formed by multiple bits of the commandcontent of the specific command after receiving the transmission bit‘1’.

According to the embodiments, an SD memory card is disclosed. The SDmemory card comprises a flash memory and the flash memory controllermentioned above.

According to the embodiments, a method used in a flash memory controllerof a SD memory card is disclosed. The flash memory controller isconfigured to couple to a flash memory within the SD memory card via aninternal bus of the SD memory card, and the flash memory controller isconfigured to connect to a SD memory card driving circuit of a hostdevice via at least one first external signal port of the SD memory cardand at least one second external signal port of the host device. Themethod comprises: receiving a first command and a first partial addressparameter sent from the SD memory card driving circuit by the hostdevice wherein the first command and the first partial address parameterare transmitted via the at least one second external signal port and aCMD pin of an SD mode of the at least one first external signal port ofthe SD memory card sequentially; receiving a second command and a secondpartial address parameter sent from the SD memory card driving circuitby the host device wherein the second command and the second partialaddress parameter are transmitted via the at least one second externalsignal port and the CMD pin of the SD mode of the at least one firstexternal signal port of the SD memory card sequentially; combining toobtain a complete address parameter according to the first partialaddress parameter and the second partial address parameter; and,performing a processing operation upon the flash memory of the SD memorycard via the internal bus according to the complete address parameterand a command type of the second command, the processing operationcorresponding to the command type. The first command is one of commandsCMD22, CMD31, CMD39, CMD41, and CMD51. The command type of the secondcommand comprises a single data unit read of CMD 17, a single data unitwrite of CMD24, a multiple data unit read of CMD18, a multiple data unitwrite of CMD25, a command queue task assignment of CMD44 or CMD45, and ablock erase of CMD32, CMD33, or CMD38. The first partial addressparameter is a portion of most significant bits of the complete addressparameter, and the second partial address parameter is a portion ofleast significant bits of the complete address parameter. The methodfurther comprises: determining whether the host device is sending acommand content of a specific command from the SD memory card drivingcircuit to the SD memory card when receiving a start bit ‘0’ and atransmission bit ‘1’ at the CMD pin of the SD mode of the at least onefirst external signal port; and, receiving information of a command typeand an address parameter formed by multiple bits of the command contentof the specific command after receiving the transmission bit ‘1’.

According to the embodiments, a host device for accessing a SD memorycard and configured to couple to a flash memory and a flash memorycontroller within the SD memory card via a SD memory card drivingcircuit of the host device, at least one second external signal port ofthe host device, at least one first external signal port of the SDmemory card, and an internal bus of the SD memory card is disclosed. Thehe host device comprises the SD memory card driving circuit and aprocessor. The processor is coupled to the SD memory card drivingcircuit, and is configured for: controlling the SD memory card drivingcircuit to send a first command and a first partial address parameter tothe SD memory card wherein the first command and the first partialaddress parameter are transmitted to the flash memory controllersequentially via the at least one second external signal port and a CMDpin of an SD mode of the at least one first external signal port of theSD memory card; controlling the SD memory card driving circuit to send asecond command and a second partial address parameter to the SD memorycard wherein the second command and the second partial address parameterare transmitted to the flash memory controller sequentially via the atleast one second external signal port and the CMD pin of the SD mode ofthe at least one first external signal port of the SD memory card; and,controlling the SD memory card driving circuit to send the first partialaddress parameter and the second partial address parameter, to make theflash memory controller combine and obtain a complete address parameteraccording to the first partial address parameter and the second partialaddress parameter and to make the flash memory controller perform aprocessing operation upon the flash memory via the internal busaccording to the complete address parameter and a command type of thesecond command, the processing operation corresponding to the commandtype. The first command is one of commands CMD22, CMD31, CMD39, CMD41,and CMD51. The command type of the second command at least comprises asingle data unit read of CMD17, a single data unit write of CMD24, amultiple data unit read of CMD18, a multiple data unit write of CMD25, acommand queue task assignment of CMD44 or CMD45, and a data unit eraseof CMD32, CMD33, or CMD38. The first partial address parameter is aportion of most significant bits of the complete address parameter, andthe second partial address parameter is a portion of least significantbits of the complete address parameter. The SD memory card drivingcircuit is arranged to sequentially send a start bit ‘0’ and atransmission bit ‘1’ to the SD memory card via the CMD pin of the SDmode of the at least one first external signal port, to make the flashmemory controller receive the start bit ‘0’ and the transmission bit ‘1’via the CMD pin of the SD mode of the at least one first external signalport to determine whether the host device is sending a command contentof a specific command from the SD memory card driving circuit to the SDmemory card and to make the flash memory controller receive informationof a command type and an address parameter formed by multiple bits ofthe command content of the specific command after receiving thetransmission bit ‘1’.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram showing a memory card device and an electronicdevice such as a host device according to embodiments of the invention.

FIG. 2 is a diagram of an example of data communication via the specificcommunication interface between the host device and SD memory card forthe maximum capacity communication according to the embodiments of theinvention.

FIG. 3 is a diagram of an example of the processor of the host devicedisplaying a calculation result of the maximum capacity of the flashmemory on the display device according to embodiments of the invention.

FIG. 4 is a diagram of the host device sending different commands to theSD memory card to write data units with different bit-length logicaladdresses.

FIG. 5 is a diagram showing the host device sending different commandsto the SD memory card to perform data unit read operations based onlogical addresses having different bit-lengths according one embodimentof the invention.

FIG. 6 is a diagram showing the host device sending different commandsto the SD memory card 100 to perform read and write operations based ondesignation data read and write lengths according to embodiments of theinvention.

FIG. 7 is a diagram showing the host device sending different commandsto the SD memory card to perform the block erase operation and the blocktransfer operation of the command queue task assignment according toembodiments of the invention.

FIG. 8 is a diagram of an example of a command transmission format of aSD memory card according to the embodiments of the invention.

FIG. 9 is a diagram showing an example of the command transmissionformat of the host device sending the command CMD22 and write commandCMD24 to write data to the SD memory card according to the embodimentsof the invention.

FIG. 10 is a state diagram of the operations of the SD memory cardaccording to embodiments of the invention.

DETAILED DESCRIPTION

Refer to FIG. 1, which is a block diagram showing a memory card device100 and an electronic device 105 such as a host device according toembodiments of the invention. The memory card device 100 for example isconnected to at least one second external signal port of host device 105via at least one first external signal port of its communicationinterface such as USB interface (but not limited) to be connected to thememory card driving circuit 1051 of host device 105. The memory carddevice 100 comprises a flash memory 110 (comprising one or more flashmemory chips) and a flash memory controller 120. The flash memorycontroller 120 is connected to the at least one first external signalport, and data transmission/communication between the flash memorycontroller 120 and the flash memory 110 is transferred via an internalbus. The host device 105 comprises a memory card driving circuit 1051, adisplay device 1052, and a processor 1053. The controller 120 at leastcomprises a processing circuit 1201 and a register 115. The memory carddevice 100 for example is an SD memory card such as SDHC card, SDXCcard, SDUC card, PCIe SD card, or NVMe SD card. The memory card drivingcircuit 1051 for example is an SD memory card driving circuit. It shouldbe noted that the memory card device 100 is not limited to the SD memorycard. In other embodiments, the memory card device 100 can be otherdifferent types of memory cards. The processor 1053 of host device 105communicates with the processing circuit 1201 of controller 120, e.g.,transmission and reception of a control command, via the SD memory carddriving circuit 1051, the at least one second external signal port, theat least one first external signal port. In addition, the memory cardcontroller 120 performs a processing operation upon the flash memory 110via the internal bus.

When the memory card device 100 is powered, the controller 120 isarranged to read basic characteristics information from the flash memory110 via the internal bus and then store the information in the register115. The basic characteristics information for example is card specificdata (CSD). The processing circuit 1201 of controller 120 can detect andcheck the characteristics of flash memory 110 and write the basiccharacteristics information into the register 115.

When the host device 105 communicates with the SD memory card 100 duringinitialization, the processor 1053 is arranged to write a command to aregister (not shown on FIG. 1) of the host device 105, and then the SDmemory card driving circuit 1051 reads such command from the register tosend a request command to the controller 120 of SD memory card 100sequentially via the at least one second external signal port and the atleast one first external signal port, to ask the SD memory card 100 toreport information back to the host device 105. For example, the hostdevice 105 sends a request command CMD9 to the SD memory card 100 to askthe card 100 report the CSD. After receiving the request command CMD9,the controller 120 of SD memory card 100 outputs and reports the CSDstored in the register 115 to the host device 105. The controller 120obtains the CSD from the register 115 and then transmits the CSD to theprocessor 1053 of host device 105 sequentially via the at least onefirst external signal port, the at least one second external signalport, and the SD memory card driving circuit 1051. The processor 1053can calculate and/or obtain the information of the flash memory 110based on the CSD. It should be noted that in practice the SD memory carddriving circuit 1051 is operative with corresponding driver software toimplement functions of command transmission and informationtransmission.

The CSD information is generated by a memory card manufacturer to use acard initialization device to load a specific card initializationprogram to generate the CSD when the manufacturer generates an SD memorycard device. The card initialization program for example is provided byan SD memory controller manufacturer. For instance, after the memorycard manufacturer decides the type of a flash memory and selects acorresponding controller, the memory card manufacturer initializes theflash memory by using the specific card initialization program providedby the SD memory controller manufacturer. The memory card manufacturerdetermines a maximum capacity of the SD card and is arranged to writeCSD information corresponding to the maximum capacity into the flashmemory permanently like burning data for the flash memory.

A flash memory for example is able to support a maximum capacity of 300TB. If the memory card manufacturer would like to generate an SD memorycard having a maximum capacity of merely 2 TB, the memory cardmanufacturer can be arranged to mark corresponding information at apredetermine field of the CSD information to be permanently written intothe flash memory. Alternatively, if the memory card manufacturer wouldlike to generate an SD memory card having a maximum capacity of merely300 TB, the memory card manufacturer can be arranged to further markadditional capacity information at other reserved/idle field(s) of theCSD information to be permanently written into the flash memory inaddition to marking corresponding information at the predetermine field.Thus, by referring to the above-mentioned information permanentlywritten, a host device to be connected to such SD memory card can obtainthat such SD memory card supports the maximum capacity of 300 TB.

In a first embodiment, when generating the SD memory card 100 for massproduction, the card initialization device of the memory cardmanufacturer can be arranged to mark a multiplier parameter in the CSDof the SD memory card 100 wherein the multiplier parameter is used forcalculating the maximum capacity of flash memory 110. After thecontroller 120 reports the CSD stored in the register 115 to host device105, the processor 1053 of host device 105 is able to obtain thecorresponding information of a basic capacity and the additionalcapacity information, marked by the memory card manufacturer, from theCSD, and thus can calculate and obtain the maximum capacity of the SDmemory card 100 (i.e. the maximum capacity of flash memory 110). Thismakes that the upper limit of the maximum capacity of the flash memory110 reported to the host device 105 can be extended as far as possibleand is not limited to the maximum capacity 2 TB of a conventional flashmemory.

Taking an example of the CSD, the CSD may comprise a 128-bit datastructure [127:0]. Two bits such as [127:126] may be used for recordingthe version information of this flash memory. 22 bits such as the C_sizefield [69:48] is used for recording a capacity of a flash memory. In theembodiment, the C_size field is used as a basic capacity and the maximumvalue of the basic capacity corresponds to the upper limit of the 32-bitlength logical address space.

However, the 22 bits (i.e. the C_size field [69:48]) at most indicate acapacity of 2 TB, and cannot indicate a capacity of more than 2 TB.Accordingly, it is inopportune.

To solve the above-mentioned problem, the provided method of theinvention is to employ other N bits in the CSD to indicate themultiplier parameter for the maximum capacity of the flash memory. Forexample, the multiplier parameter is equal to two to the power of N,i.e., 2^(N), and N for example is equal to 5. The N bits can beimplemented by using five bits which are original used as reserved/idlebits of the CSD, e.g. [75:70], to indicate the multiplier parameter forthe maximum capacity of the flash memory. The five bits in the followingdescriptions are defined as capacity indication/indicator/mark bits orfirst bits. The five bits can be used to indicate a value range from 0to 31. Thus, the multiplier parameter ranges from a value of two to thepower of zero to a value of two to the power of 31, i.e. 2⁰-2³¹. Thefive bits for example may be from ‘00000’ to ‘11111’ to indicate a valuerange from zero to 32. When the five bits are used to indicate a valueof 32, the five bits can be used with the C_size field (which canindicate a basic capacity of 2 Tb at most) to indicate the maximumcapacity supporting the addressing of a 64-bit length address space. Inaddition, in other embodiments, six idle bits in the CSD, e.g. [75:70],may be employed as capacity indication bits. The six bits for examplemay be from ‘000000’ to ‘100000’ to indicate a value range from zero to32. When the six bits are used to indicate a value of 32, the six bitscan be also used with the C_size field (which can indicate a basiccapacity of 2 Tb at most) to indicate the maximum capacity supportingthe addressing of a 64-bit length address space. It should be noted thatthe value of N is not meant to be a limitation. Also, the multiplierparameter is not limited as 2^(N). In other embodiments, the multiplierparameter may be configured as another different integer to the power ofN such as four to the power of N.

Refer to FIG. 2, which is a diagram of an example of data communicationvia the specific communication interface between the host device 105 andSD memory card 100 for the maximum capacity communication according tothe embodiments of the invention. As shown in FIG. 2, the host device105 sends the request command CMD9 to the SD memory card 100, and the SDmemory card 100 reports the CSD back to the host device 105 wherein twobits are used for indicating the version of the CSD and theabove-mentioned five capacity indication bits can be the five bitsconfigured before the C_size field. However, this is not intended to bea limitation.

The cad initialization device of the memory card manufacturer can setthe version of the CSD according to whether the maximum capacity offlash memory 110 exceeds above a specific capacity such as the maximumcapacity of 2 TB corresponding to the addressing of a 32-bit lengthaddress space. For example, if the maximum capacity of flash memory 110is not larger than 2 TB, then the memory card manufacturer is arrangedto set the version of such CSD as an old version to indicate that thisflash memory supports the capacity of 2 TB at most, to make the SDmemory card 100 is compatible with an existing conventional host device.Thus, even though the SD memory card with functions of a new version canbe configured as the old version to be compatible with a host devicewith merely old versions of driver software. In addition, the oldversions of driver software installed in the host device can be updatedto a newer version. If the maximum capacity of flash memory 110 exceedsabove 2 TB, then the card initialization device of the memory cardmanufacturer is arranged to configure the version of the CSD as a newversion to indicate that this flash memory can support more than 2 TBcapacity.

Thus, when receiving the CSD reported by the controller 120, theprocessor 1053 of host device 105 can preliminarily determine whetherthe maximum capacity of this flash memory 110 exceeds above the maximumcapacity 2 TB of a 32-bit length address space, by checking the versionof the CSD. If the version is an old version, then the processor 1053 isarranged to determine the maximum capacity of this flash memory 110according to the value indicated by the 22 bits of the C_size field. Ifthe version is a new version, then the processor 1053 is arranged tocalculate the maximum capacity based on the multiplier parameter pointedout by the five capacity indication bits mentioned above in addition toreferring to the 22 bits of the C_size field.

As mentioned above, when the host device 105 receives the CSD, theprocessor 1053 can refer to the value represented by the 22 bits ofC_size field and the value represented by the above-mentioned fivecapacity indication bits to calculate the maximum capacity of the flashmemory 110. In other words, instead of directly notifying the hostdevice 105 of the maximum capacity, the SD memory card 100 is arrangedto mark a multiplier of the capacity of a flash memory in the datastructure of the CSD to make the processor 1053 calculate the maximumcapacity of the flash memory 110 by itself. For example, refer to thefollowing table. The following table shows multiple examples of theinformation in the CSD:

Capacity Value M indicated represented Multiplier by C_size by Ncapacity parameter Maximum field(22 bits) indication bits (2^(M))capacity 1.5 TB 0 2⁰ 1.5 TB 1.5 TB 1 2¹ 3 TB 2 TB 0 2⁰ 2 TB 1 TB 1 2¹ 2TB 2 TB 1 2¹ 4 TB 2 TB 23  2²³ 16 EB 1.25 TB 1 2¹ 2.5 TB (27FFFF) 1.5 TB1 2¹ 3 TB (2FFFFF) 1.875 TB 4 2⁴ 30 TB (3BFFFF) 1.171875 TB 8 2⁸ 300 TB(257FFF) 1.46484375 TB 11  2¹¹ 3000 TB (2EDFFF)

As mentioned above, the C_size field is arranged to indicate informationof a basic capacity of a flash memory. For example, the value of C_sizefield can be used to indicate the capacity of 2 TB at most. In oneembodiment, to indicate that a flash memory has the maximum capacity of1.5 TB, the card initialization device of the memory card manufacturercan be arranged to set the value represented by the bits of C_size fieldto correspond to 1.5 TB, and to set the value represented by N bits aszero; i.e. the multiplier parameter is configured as 2⁰=1. Accordingly,after receiving the CSD, the processor 1053 of host device 105 cancalculate and obtain that the maximum capacity of the flash memory 110is equal to 1.5 TB.

In another embodiment, to indicate that the flash memory has the maximumcapacity of 3 TB, the card initialization device of the memory cardmanufacturer can be arranged to set the value represented by the bits ofC_size field to correspond to 1.5 TB, and to set the value representedby N bits as one; i.e. the multiplier parameter is configured as 2¹=2.Accordingly, after receiving the CSD, the processor 1053 of host device105 can calculate and obtain that the maximum capacity of the flashmemory 110 is equal to 3 TB.

In another embodiment, to indicate that the flash memory has the maximumcapacity of 2 TB, the card initialization device of the memory cardmanufacturer can be arranged to set the value represented by the bits ofC_size field to correspond to 2 TB, and to set the value represented byN bits as zero; i.e. the multiplier parameter is configured as 2⁰=1.Accordingly, after receiving the CSD, the processor 1053 of host device105 can calculate and obtain that the maximum capacity of the flashmemory 110 is equal to 2 TB.

Further, in other embodiments, the card initialization device of thememory card manufacturer can be also arranged to set the valuerepresented by the bits of C_size field to correspond to 1 TB, and toset the value represented by N bits as one; i.e. the multiplierparameter is configured as 2¹=2. Accordingly, after receiving the CSD,the processor 1053 can calculate that the maximum capacity of the flashmemory 110 is equal to 2 TB. That is, the card initialization device ofthe memory card manufacturer can be arranged to use a variety ofsettings and marks to indicate the same capacity size.

In one embodiment, to indicate that the flash memory has the maximumcapacity of 4 TB, the card initialization device of the memory cardmanufacturer can be arranged to set the value represented by the bits ofC_size field to correspond to 2 TB, and to set the value represented byN bits as one; i.e. the multiplier parameter is configured as 2¹=2.Accordingly, after receiving the CSD, the processor 1053 of host device105 can calculate and obtain that the maximum capacity of the flashmemory 110 is equal to 4 TB.

In one embodiment, to indicate that the flash memory has the maximumcapacity of 16 EB, the card initialization device of the memory cardmanufacturer can be arranged to set the value represented by the bits ofC_size field to correspond to 2 TB, and to set the value represented byN bits as 23; i.e. the multiplier parameter is configured as two to thepower of 23, 2²³. Accordingly, after receiving the CSD, the processor1053 of host device 105 can calculate and obtain that the maximumcapacity of the flash memory 110 is equal to 16 EB.

Further, to indicate that the flash memory has the maximum capacity of2.5 TB, the card initialization device of the memory card manufacturercan be arranged to set the value represented by the bits of C_size fieldto correspond to 1.25 TB, and to set the value represented by N bits asone; i.e. the multiplier parameter is configured as 2¹=2. Accordingly,after receiving the CSD, the processor 1053 of host device 105 cancalculate and obtain that the maximum capacity of the flash memory 110is equal to 2.5 TB.

In other examples, to indicate that the flash memory has the maximumcapacity of 3 TB, the card initialization device of the memory cardmanufacturer can be arranged to set the value represented by the bits ofC_size field to correspond to 1.5 TB, and to set the value representedby N bits as one; i.e. the multiplier parameter is configured as 2¹=2.Accordingly, after receiving the CSD, the processor 1053 of host device105 can calculate and obtain that the maximum capacity of the flashmemory 110 is equal to 3 TB.

Further, to indicate that the flash memory has the maximum capacity of30 TB, the card initialization device of the memory card manufacturercan be arranged to set the value represented by the bits of C_size fieldto correspond to 1.875 TB, and to set the value represented by N bits asfour; i.e. the multiplier parameter is configured as 2⁴=16. Accordingly,after receiving the CSD, the processor 1053 of host device 105 cancalculate and obtain that the maximum capacity of the flash memory 110is equal to 30 TB.

Further, to indicate that the flash memory has the maximum capacity of300 TB, the card initialization device of the memory card manufacturercan be arranged to set the value represented by the bits of C_size fieldto correspond to 1.171875 TB, and to set the value represented by N bitsas eight; i.e. the multiplier parameter is configured as 2⁸.Accordingly, after receiving the CSD, the processor 1053 of host device105 can calculate and obtain that the maximum capacity of the flashmemory 110 is equal to 300 TB.

Further, to indicate that the flash memory has the maximum capacity of3000 TB, the card initialization device of the memory card manufacturercan be arranged to set the value represented by the bits of C_size fieldto correspond to 1.46484375 TB, and to set the value represented by Nbits as eleven; i.e. the multiplier parameter is configured as 2¹¹.Accordingly, after receiving the CSD, the processor 1053 of host device105 can calculate and obtain that the maximum capacity of the flashmemory 110 is equal to 3000 TB.

The provided method of the invention is arranged to employ a field of Ncapacity indication bits in the CSD to indicate a value of themultiplier parameter (2^(N)) for capacity, to significantly extend theindication of the upper limit of the maximum capacity of a flash memory.Compared to the conventional method adopting merely the C_size field toindicate that the maximum capacity of a flash memory has 2 TB at most,the provided method can extend the indication of the upper limit of themaximum capacity of a flash memory as well as avoid using too many bitsfor implementation by using the multiplier parameter equal to an integerto the power of N. For example, by employing the five capacityindication bits to indicate the multiplier parameter and using the 22bits of C_size field, it can indicate that a flash memory may have thecapacity of 16 EB at most, i.e. the upper limit of the maximum capacity.

Further, when receiving the CSD, the processor 1053 of host device 105can calculate and obtain the maximum capacity of the flash memory 110and then display a calculation result on the display device 1052 to makethe user know the maximum capacity of the flash memory 110. Refer toFIG. 3. FIG. 3 is a diagram of an example of the processor 1053 of hostdevice 105 displaying a calculation result of the maximum capacity ofthe flash memory 110 on the display device 1052 according to embodimentsof the invention. The display device 1052 is capable of displaying thatthe maximum capacity of flash memory 110 is equal to 465 TB (i.e.exceeds above 2 TB), the used capacity space is equal to 103 TB, and theavailable capacity space is equal to 362 TB. It should be noted that theabove values and display contents are merely used for illustrativepurposes and are not meant to be limitations of the invention.

Further, in other embodiments, when the host device 105 calculates toobtain the maximum capacity of the flash memory 110, the processor 1053is arranged to control the SD memory card driving circuit 1051 to senddifferent bit-length logical addresses to the controller 120 of SDmemory card 100 sequentially via the at least one second external signalport and the at least one first external signal port according to themaximum capacity, to make the controller 120 of SD memory card 100convert logical addresses into physical addresses and then perform acorresponding processing operation upon the flash memory 110 via theinternal bus according to the physical addresses. For example, in thisembodiment, if the maximum capacity is not larger than 2 TB, then thehost device 105 is arranged to control the SD memory card drivingcircuit 1051 to send a 32-bit length logical address to the controller120 of SD memory card 100 sequentially via the at least one secondexternal signal port and the at least one first external signal portwherein the 32-bit length logical address supports the addressing of alogical capacity space size of 2 TB. Instead, if the maximum capacity islarger than 2 TB, then the host device 105 is arranged to control the SDmemory card driving circuit 1051 to send a longer bit-length logicaladdress to the controller 120 of SD memory card 100 sequentially via theat least one second external signal port and the at least one firstexternal signal port wherein the longer bit-length logical address has abit length longer than 32-bit length and can supports the addressing ofa logical capacity space size of more than 2 TB. The longer bit lengthfor example is a 38-bit length or a 64-bit length and depends on themaximum capacity of the flash memory 110.

For addressing compatibility of the 32-bit length logical address spaceand a longer bit length logical address space such as the 38-bit lengthor 64-bit length logical address space, it is not necessary and requiredfor the provided method of the invention to further implement otherpin(s) or connection port(s). The provided method is arranged to employthe same pin or connection port applied for the 32-bit length logicaladdress space to implement the addressing of a longer bit length logicaladdress space. The host device 105 can be arranged to send a variety ofdifferent commands carrying information of a longer bit length logicaladdress to the SD memory card 100 via the same pin or connection portapplied for the 32-bit length logical address space, i.e. the at leastone second external signal port and the at least one first externalsignal port.

In the following embodiments, the driving circuit 1051 of host device105 is arranged to send a first command and transmit a first partialaddress parameter capable of carrying at most a 32-bit length addressparameter, and then to send a second command and transmit a secondpartial address parameter capable of carrying at most another 32-bitlength address parameter, so as to make the controller 120 of SD memorycard 100 be able to combine and obtain a longer bit-length addressparameter (which is an address longer than a 32-bit length address)after receiving the first partial address parameter and the secondpartial address parameter. For example, the controller 120 can combineand obtain a complete 64-bit length address parameter from the two32-bit length addresses and then perform an operation of a command queuetask assignment, data unit read/write, or data unit erase according to acommand type of the second command. It should be noted that the firstcommand for example can be implemented by using a command which is areserved command specified in the SD memory card specification, e.g. oneof commands CMD22, CMD31, CMD39, CMD41, CMD51, and so on. In addition,the first partial address parameter and second partial address parameterare not limited to 32-bit length addresses. The processor 1053 of hostdevice 105 can determine the total bit-length formed by the firstpartial address parameter and second partial address parameter accordingto the actual maximum capacity of the flash memory 110. For example, ifthe maximum capacity is equal to 128 TB, then the total bit length canbe determined as a 38-bit length wherein the first partial addressparameter for example indicates a 6-bit length and the second partialaddress parameter indicates a 32-bit length. However, this is notintended to be a limitation. The first partial address parameter andsecond partial address parameter can be variable. In addition, a dataunit mentioned above means data amount of a storage page or data amountof a storage block; this is not meant to be a limitation.

Refer to FIG. 4, which is a diagram of the host device 105 sendingdifferent commands to the SD memory card 100 to write data units withdifferent bit-length logical addresses. As shown in FIG. 4, for sendinga write command carrying a 32-bit length logical address to the SDmemory card 100, the host device 105 for example controls the SD memorycard driving circuit 1051 to send a command CMD24 and transmit a 32-bitlength address parameter such as a logical address of a data unit to thecontroller 120 of SD memory card 100 sequentially via the at least onesecond external signal port and the at least one first external signalport, and then to send a data unit to the controller 120 of SD memorycard 100 via the above same path, so that the controller 120 writes thedata unit corresponding to the 32-bit length logical address into theflash memory 110 via the internal bus after receiving the write commandand the data unit.

For sending a write command and a longer bit-length address such as a64-bit length logical address to the SD memory card 100, the host device105 for example controls the SD memory card driving circuit 1051 to senda specific command, e.g. a first command CMD22 (but not limited), andtransmits a first partial address parameter such as 32 most significantbits of the 64-bit length logical address (which can be regarded as afirst 32-bit length logical address) to the controller 120 of SD memorycard 100 sequentially via the at least one second external signal portand the at least one first external signal port. The SD memory carddriving circuit 1051 then sends a command CMD24 and transmits a secondpartial address parameter such as 32 least significant bits of the64-bit length logical address (which can be regarded as a second 32-bitlength logical address) to the controller 120 of SD memory card 100sequentially via the at least one second external signal port and the atleast one first external signal port. Then the driving circuit 1051sends a data unit to the controller 120 via the above identical path sothat the controller 120 can write the data unit corresponding the 64-bitlength logical address into the flash memory 110 via the internal busafter receiving the above two commands and such data unit.

Further, in another embodiment, the host device 105 can be arranged tosend a command CMD20 to the SD memory card 100 via the same signal pathbefore sending the command CMD22, to indicate a video speed class datawriting.

It should be noted that in the following embodiments the operation ofsending a command from the host device 105 to the controller 120 of SDmemory card 100 uses a signal path which is identical to the abovesignal path. Instead, for the operation of sending data from thecontroller 120 to the host device 105, the data is transmitted via theat least one first external signal port and the at least one secondexternal signal port sequentially. The description is not detailed forbrevity.

For writing multiple data units, when sending a multiple data unit writecommand carrying a 32-bit length logical address to the SD memory card100, the host device 105 for example controls the SD memory card drivingcircuit 1051 to send a command CMD25 and transmit a 32-bit lengthaddress parameter such as a logical address to the SD memory card 100,and then to send multiple data units to the SD memory card 100 to writethe multiple data units associated with the 32-bit length logicaladdress wherein the 32-bit length logical address can be a write startlogical address for the multiple data units.

Further, when sending a 64-bit length logical address and a multipledata unit write command to the SD memory card 100, the host device 105for example controls the SD memory card driving circuit 1051 to send aspecific command such as the first command CMD22 carrying a firstpartial address parameter such as 32 most significant bits of the 64-bitlength logical address to the SD memory card 100, then to send thecommand CMD25 carrying a second partial address parameter such as 32least significant bits of the 64-bit length logical address to the SDmemory card 100, and then to send the multiple data units to the SDmemory card 100, so as to write the multiple data units associated withthe 64-bit length logical address which is the 64-bit length addressparameter which can be formed by combining the first partial addressparameter and the second partial address parameter and may be a writestart logical address for the above-mentioned multiple data units.

Thus, the processing circuit 1201 can obtain the first partial addressparameter when receiving the specific command such as command CMD22,then obtain the second partial address parameter when receiving thecommand CMD24 or CMD 25, and then can combine the first partial addressparameter and second partial address parameter to obtain the 64-bitlength address parameter, and then can determine that a subsequentoperation is a single data unit write operation or a multiple data unitwrite operation according to the command type of the command CMD24 orCMD25 and thus perform the single data unit write operation or themultiple data unit write operation based on the 64-bit length logicaladdress. Instead, if the processing circuit 1201 of controller 120merely receives the second partial address parameter transmitted fromthe command CMD24 or CMD 25 while the specific command CMD22 andcorresponding first partial address parameter are not received, then theprocessing circuit 1201 of controller 120 is arranged to determine thatthe first partial address parameter is equal to zero and the host device105 is arranged to write one or more data units having 32-bit lengthlogical addresses.

Refer to FIG. 5, which is a diagram showing the host device 105 sendingdifferent commands to the SD memory card 100 to perform data unit readoperations based on logical addresses having different bit-lengthsaccording one embodiment of the invention. As shown by FIG. 5, forsending a 32-bit length logical address associated with a read commandto the SD memory card 100, the host device 105 for example sends thecommand CMD17 and a 32-bit length address parameter such as a logicaladdress of a single data unit to the SD memory card 100 by using the SDmemory card driving circuit 1051, and then reads back the single dataunit from the SD memory card 100. For sending a 64-bit length logicaladdress associated with a read command to the SD memory card 100, thehost device 105 for example sending a specific command such as a firstcommand CMD22 and a first partial address parameter such as 32 mostsignificant bits of the 64-bit length logical address to the SD memorycard 100 by using the SD memory card driving circuit 1051, and thensends the command CMD17 and a second partial address parameter such as32 least significant bits of the 64-bit length logical address to the SDmemory card 100, and then reads back a single data unit correspondingthe 64-bit length logical address from the SD memory card 100.

For a read operation of multiple data units, when sending a 32-bitlength logical address associated with a read command (for readingmultiple data units) to the SD memory card 100, the host device 105 forexample sends the command CMD18 and a 32-bit length address parametersuch as a logical address of a single data unit to the SD memory card100 by using the SD memory card driving circuit 1051, and then readsback the multiple data units from the SD memory card 100 wherein the32-bit length address parameter may be a read start logical address ofthe multiple data units.

Additionally, when sending a 64-bit length logical address associatedwith a read command (for reading multiple data units) to the SD memorycard 100, the host device 105 for example sends a specific command suchas the first command CMD22 and a first partial address parameter such as32 most significant bits of the 64-bit length logical address to the SDmemory card 100 by using the SD memory card driving circuit 1051, thensends the command CMD18 and a second partial address parameter such as32 least significant bits of the 64-bit length logical address to the SDmemory card 100, and then reads back the multiple data units from the SDmemory card 100 wherein a 64-bit length address parameter formed by thefirst partial address parameter and the second partial address parametermay be a read start logical address of the multiple data units.

Thus, the processing circuit 1201 of controller 120 can obtain the firstpartial address parameter when receiving the specific command such asCMD22, and then can obtain the second partial address parameter whenreceiving the command CMD17 or CMD18. The processing circuit 1201 canobtain the 64-bit length address parameter by combining the firstpartial address parameter and the second partial address parameter, andthen can know the read command is associated with single one data unitor multiple data units according to the command type of the commandCMD17 or CMD18. Thus, the processing circuit 1201 can correctly performthe read operation associated with one or multiple data units based onthe 64-bit length logical address.

Instead, if the processing circuit 1201 of controller 120 merelyreceives the command CMD17 or CMD18 and the corresponding second partialaddress parameter while the specific command CMD22 and a correspondingfirst partial address parameter are not received, then the processingcircuit 1201 of controller 120 is arranged to determine that the firstpartial address parameter is equal to zero and decides that the hostdevice 105 is arranged to read one or more data units based on 32-bitlength logical address(es).

Additionally, the host device 105 may be arranged to send a commandCMD23 to indicate a data write/read length before sending the firstcommand CMD22. Refer to FIG. 6, which is a diagram showing the hostdevice 105 sending different commands to the SD memory card 100 toperform read and write operations based on designation data read andwrite lengths according to embodiments of the invention. As shown inFIG. 6, the host device 105 for example sends the command CMD23 andtransmits a designation data length parameter to the SD memory card 100by using the SD memory card driving circuit 1051, then sends the commandCMD25 and the 32-bit length address parameter such as a logical addressof a single one data unit to the SD memory card 100, and then sendsmultiple data units corresponding to the designation data lengthparameter to the SD memory card 100, to write the multiple data units ofthe designation data length parameter corresponding to a 32-bit lengthlogical address. The 32-bit length logical address is a start address ofthe multiple data units of the designation data length parameter.

Additionally, the host device 100 for example sends the command CMD23and a designation data length parameter to the SD memory card 100 byusing the SD memory card driving circuit 1051, then sends a specificcommand such as the first command CMD22 (but not limited) and a firstpartial address parameter such as 32 most significant bits of a 64-bitlength logical address, then sends the command CMD25 and a secondpartial address parameter such as 32 least significant bits of the64-bit length logical address to the SD memory card 100, and then sendsmultiple data units corresponding to the designation data lengthparameter to the SD memory card 100, to write the multiple data unitscorresponding to the designation data length parameter corresponding tothe 64-bit length logical address. The 64-bit length logical address isa start address of the multiple data units of the designation datalength parameter, and can be obtained by combining the first partialaddress parameter and the second partial address parameter.

Additionally, for reading data, the host device 105 for example anindication command CMD23 and an designation read data length parameterto the SD memory card 100 by using the SD memory card driving circuit1051, then sends the command CMD18 and the 32-bit length addressparameter such as a logical address of a single one data unit to the SDmemory card 100, and then reads back multiple data units correspondingto the designation read data length parameter from the SD memory card100. The 32-bit length address parameter is a start address of themultiple data units corresponding to the designation read data lengthparameter.

Additionally, the host device 105 for example sends the command CMD23and transmits a designation read data length parameter to the SD memorycard 100 by using the SD memory card driving circuit 1051, then sends aspecific command such as the first command CMD22 (but not limited) andtransmits a first partial address parameter such as 32 most significantbits of a 64-bit length logical address, then sends the command CMD25and the second partial address parameter such as 32 least significantbits of the 64-bit length logical address to the SD memory card 100, andthen reads back multiple data units corresponding to the designationread data length parameter from the SD memory card 100. The 64-bitlength address parameter is a start address of the multiple data unitscorresponding to the designation read data length parameter, and can beobtained by combining the first partial address parameter and the secondpartial address parameter.

Further, the above-mentioned operations can be applied in embodiments ofblock erase and block transfer of a command queue task assignment. Referto FIG. 7, which is a diagram showing the host device 105 sendingdifferent commands to the SD memory card 100 to perform the block eraseoperation and the block transfer operation of the command queue taskassignment according to embodiments of the invention. As shown in FIG.7, the host device 105 for example sends the command CMD32 and transmitsthe 32-bit length designation erase start address parameter to the SDmemory card 100 by using the SD memory card driving circuit 1051, thensends the command CMD33 and transmits a 32-bit length designation eraseend address parameter to the SD memory card 100, and then sends acommand CMD38 to the SD memory card 100, to perform the block eraseoperation. Thus, when the processing circuit 1201 of controller 120sequentially receives the command CMD32, the 32-bit length designationerase start address parameter, the command CMD33, the 32-bit lengthdesignation erase end address parameter, and the command CMD38, theprocessing circuit 1201 of controller 120 can correspondingly performthe block erase operation upon block content of an designated addresssegment to be erased.

Additionally, the host device 105 for example uses the SD memory carddriving circuit 1051 to send a specific command such as the firstcommand CMD22 (but not limited) and transmit a first partial addressparameter such as 32 most significant bits of a 64-bit length logicaladdress to the SD memory card 100, and then to send the command CMD32and transmit a second partial address parameter such as 32 leastsignificant bits of the 64-bit length logical address to the SD memorycard 100. The above-mentioned first partial address parameter and secondpartial address parameter can be combined to obtain a 64-bit lengthdesignation erase start address parameter. The host device 105 then usesthe SD memory card driving circuit 1051 to send the specific commandCMD22 and transmit another first partial address parameter such as 32most significant bits of the 64-bit length logical address, and then tosend the command CMD33 and transmit another second partial addressparameter such as 32 least significant bits of the 64-bit length logicaladdress to the SD memory card 100. The above another first partialaddress parameter and another second partial address parameter can becombined to obtain a 64-bit length designation erase end addressparameter. The host device 105 finally sends the command CMD38 to the SDmemory card 100 to perform the block erase operation. Thus, whensequentially receiving the above-mentioned commands and correspondingparameters, the processing circuit 2101 of controller 120 can combinethe partial address parameters to obtain the 64-bit length designationerase start address parameter and the 64-bit length designation eraseend parameter, and thus performs the block erase operation upon datacontent of a 64-bit length address segment indicated by the designationerase parameters.

Further, for data unit transfer of the command queue task assignment,the host device 105 for example uses the SD memory card driving circuit1051 to send a first transfer command CMD44 and transmit transferparameter information of data read/write, priority, task ID, and thetotal number of data units to the SD memory card 100, and then to send asecond transfer command CMD45 and transmit a 32-bit length designationdata unit start address parameter corresponding to the task ID to the SDmemory card 100. Thus, when sequentially receiving the above-mentionedcommands and corresponding parameters, the processing circuit 1201 ofcontroller 120 can perform the data unit transfer operation based on a32-bit length start address.

Additionally, for data unit transfer of a 64-bit length address, thehost device 105 for example uses the SD memory card driving circuit 1051to send the command CMD44 and transmit parameters of data read/write,priority, task ID, and the total number of data units to the SD memorycard 100, then to send a specific command such as the first commandCMD22 (but not limited) and transmit the first partial address parametercorresponding to the task ID, e.g. 32 most significant bits of a 64-bitlength logical address, to the SD memory card 100, and then to a secondtransfer command CMD45 and transmit the second partial address parametercorresponding to the task ID, e.g. 32 least significant bits of the64-bit length logical address, to the SD memory card 100. Thus, whensequentially receiving the above-mentioned commands and correspondingparameters, the processing circuit 1201 of controller 120 can combineand obtain the 64-bit length start address and then perform the dataunit transfer operation based on the 64-bit length start address.

According to the embodiments of the invention, the processing circuit1201 of controller 120 is arranged to combine and obtain a longerbit-length address parameter after receiving the first partial addressparameter and second partial address parameter. For example, theprocessing circuit 1201 can combine the two 32-bit length partialaddress parameters to obtain a complete 64-bit length address parameter,and then perform a corresponding operation such as a task assignment ofa command queue, data unit read/write, and erase according to thecorresponding command type. In other words, the provided method of theinvention is to send the first command and transmit the first partialaddress parameter to the SD memory card and then to send the secondcommand and transmit the second partial address parameter to the SDmemory card, to make the processing circuit 1201 of controller 120 of SDmemory card be able to refer to the first and second partial addressparameters to obtain and obtain a longer bit length address parametersuch as a 64-bit length address parameter and then perform theoperations of task assignment of command queue, data unit read/write, orerase. Further, the first partial address parameter can be a high-orderbit address parameter, and the second partial address parameter can be alow-order bit address parameter. In addition, the first partial addressparameter can be a low-order bit address parameter, and the secondpartial address parameter is a high-order bit address parameter. Thesemodifications all fall within the scope of the invention. Further, theabove-mentioned specific command can be a first command such as areserved command specified in the SD memory card specification, and isnot limited as the command CMD22; the first command can be one of othercommands CMD31, CMD39, CMD41, and CMD51.

Additionally, it is not necessary for the provided method of theinvention to further implement additional pin(s) or port(s). Toimplement addressing of a longer bit length address space, only theoriginal pins or ports compatible with the addressing of 32-bit lengthaddress space is needed. The following table shows an example of pinnumbers, names, types, and corresponding descriptions of an SD mode of aspecific SD memory card in the embodiments of the invention:

Pin SD mode number Name Type Description 1 CD/DAT3 I/O/PP Carddetection/ Data line 3[Bit 3] 2 CMD I/O/PP Command/Response 3 VSS1 SGround 4 VDD S Power supply 5 CLK I Clock 6 VSS2 S Ground 7 DAT0 I/O/PPData line 0[Bit 0] 8 DAT1 I/O/PP Data line 1[Bit 1] 9 DAT2 I/O/PP Dataline 2[Bit 2]

‘S’ means the power supply, ‘I’ means the input, ‘O’ means the push-pulldriving output, and ‘PP’ means the push-pull driving input and output.The above-mentioned commands are transmitted via the CMD pin, and datais transmitted via the pins of DAT0, DAT1, DAT2, and CD/DAT3.

Refer to FIG. 8. FIG. 8 is a diagram of an example of a commandtransmission format of a SD memory card according to the embodiments ofthe invention. As shown in FIG. 8, each of the above-mentioned commandsfor example is transmitted via the CMD pin based on such commandtransmission format. For example, each command of the first command,read commands, and write commands when transmitted from the drivingcircuit 1051 of host device 105 to the SD memory card 100 via the secondsignal port and first signal port for example includes a start bit ‘0’,a transmission bit ‘1’, a command content, a CRC parity check code, andan end bit ‘1’ which are transmitted sequentially wherein the commandcontent includes a command type (e.g. first, read, or write) formed bymultiple bits and address information or parameter such as the 32-bitlength partial address parameter mentioned above which are transmittedsequentially. The CRC parity check code for example is a checksum formedby seven bits. The command transmission format for example has a totalbit length of 48 bits. Accordingly, when sequentially receiving thestart bit ‘0’ and the transmission bit ‘1’ at the CMD pin of firstsignal port via the internal bus, the controller 120 can detect that thehost device 105 is transmitting a command to the SD memory card 100. Thecontroller 120 can sequentially receive and obtain the information ofcommand type and information of address parameter according to thecommand transmission format and can check whether an error occurs in bitinformation of the transmitted command by using the CRC parity checkcode. Finally, when detecting the end bit ‘1’, the controller 120 canknow the end position of the transmitted command.

Refer to FIG. 9. FIG. 9 is a diagram showing an example of the commandtransmission format of the host device 105 sending the command CMD22 andwrite command CMD24 to write data to the SD memory card 100 according tothe embodiments of the invention. For example, as shown by FIG. 9, thehost device 105 is arranged to write data with a 64-bit length addresssuch as 0x0505_0505_0A0A_0A0A (but not limited). When sending thecommand CMD22, the host device 105 sequentially sends the start bit ‘0’,the transmission bit ‘1’, the command content of command CMD22, the CRCparity check code of command CMD22, and corresponding end bit ‘1’. Thenthe host device 105 sends another start bit ‘0’, another transmissionbit ‘1’, the command content of command CMD24, the CRC parity check codeof command CMD24, and corresponding end bit ‘1’, and then transmits datato be written. The command content of command CMD22 carries informationof the command type of CMD 22, e.g. 0x16, and the 32 most significantbits of the 64-bit length address, e.g. 0x0505_0505. The command contentof command CMD24 carries information of the command type of CMD24, e.g.0x18, and the 32 least significant bits of the 64-bit length address,e.g. 0x0A0A_0A0A. After receiving the information of the command typesof the two commands and corresponding address information/parameters,the processing circuit 1201 of controller 120 can combine and obtain the64-bit length address and can decide that the operation to be performedrequested by the host device 105 is a write command operation. It shouldbe noted that the commands CMD22 and CMD24 are merely used as examplesfor explaining the information of a command type and correspondingaddress information. These examples are not meant to be limitations ofthe invention.

Additionally, based on the teachings of the invention, one personskilled in the art would be able to appreciate that in anotherembodiment the command content of command CMD22 carries the addressinformation (e.g. 0x0505_0505) representing the 32 least significantbits of a 64-bit length address such as 0x0A0A_0A0A 0505_0505 (but notlimited) and the command content of the write command CMD24 carries theaddress information (e.g. 0x0A0A_0A0A) representing the 32 mostsignificant bits of the 64-bit length address such as 0x0A0A_0A0A0505_0505 (but not limited) when the host device 105 performs data writebased on such 64-bit length address. In other words, under a conditionthat the host device 105 sends the commands CMD22 and CMD24sequentially, the command CMD22 and command CMD24 can be respectivelyused to transmit a portion and another portion of a 64-bit lengthaddress. In addition, when the flash memory controller 120 receives aportion and another portion of a 64-bit length address, the controller120 can also correctly combine and obtain a complete 64-bit lengthaddress according to the command communication protocol between the hostdevice 105 and controller 120. These modifications all fall within thescope of the invention.

FIG. 10 is a state diagram of the operations of the SD memory card 100according to embodiments of the invention. As shown in FIG. 10, supposethat the state diagram begins at the state 1200. The state 1200 is adata transfer state. In this state, the SD memory card 100 does not yetreceive any one access command. That is, the SD memory card 100 does notyet receive 32 most significant bits and 32 least significant bits ofany one 64-bit length logical address. If the SD memory card 100 in thestate 1200 receives a command CMD17, CMD18, CMD24, or CMD25, then thisindicates that the SD memory card 100 receives merely a 32-bit lengthaddress parameter. The SD memory card 100 receives 32 least significantbits of the 64-bit length logical address carried by the command CMD17,CMD18, CMD24, or CMD25. The SD memory card 100 then enters the state1204. The state 1204 is a state of obtaining a low-order bit addressparameter. The SD memory card 100 then enters the state 1250 from thestate 1204. The state 1250 is an execution or rejection state. Forexample, if the SD memory card 100 in the state 1250 merely receives 32least significant bits of a 64-bit length logical address carried by thecommand CMD17, CMD18, CMD24, or CMD25, the 32 least significant bits isregarded as a 32-bit length address for the corresponding executionoperation. In this situation, the controller 120 of SD memory card 100is arranged to perform a read/write operation upon the flash memory 110based on the 32-bit length address. If a command cannot be executed(e.g. the address of the command is out of the range or a command is awrite command but the determined address is associated with a read-onlyarea and thus cannot be written), the SD memory card 100 rejects theexecution operation. Then, the SD memory card 100 switches from state1250 to the state 1200.

If a command CMD 22 is received in the state 1200, then this indicatesthat the SD memory card 100 receives 32 most significant bits of a64-bit length logical address carried by the command CMD22. The SDmemory card 100 then enters the state 1202 which is a state of obtaininga high-order bit address parameter. In the state 1202, if the commandCMD22 is received again, then SD memory card 100 is arranged to updatethe 32 most significant bits of the 64-bit length logical addressaccording the last received command CMD22. If in the state 1202 the SDmemory card 100 receives the command CMD17, CMD18, CMD24, or CMD25, thenthe SD memory card 100 enters the state 1204. This indicates that the SDmemory card 100 receives the 32 least significant bits of the 64-bitlength logical address carried by the command CMD17, CMD18, CMD24, orCMD25. In this situation, when entering the state 1250, the controller120 of SD memory card 100 is arranged to perform a data read/writeoperation upon the flash memory 110 based on the 64-bit length logicaladdress. If a command CMD32 is received in the state 1202, the SD memorycard 100 enters the state 1212.

If other commands different from the commands CMD22, CMD17, CMD18,CMD24, CMD25, and CMD32 are received in the state 1202, then the SDmemory card 100 enters the state 1260. When entering the state 1260, theSD memory card 100 is arranged goes back to the data transfer state1200.

If a command CMD 23 is received in the state 1200, this indicates thatthe SD memory card 100 receives a command of a designation read/writedata length. The SD memory card 100 enters the state 1222 which is astate of a high-order bit address parameter being zero. That is, the 32most significant bits of a 64-bit length logical address are notreceived. If in the state 1222 the command CMD23 are receivedrepeatedly, the SD memory card 100 keeps in the state 1222. If in thestate 1222 the command CMD22 is received, then this indicates that theSD memory card 100 currently receives the 32 most significant bits ofthe 64-bit length logical address carried by the command CMD22. Then theSD memory card 100 enters the state 1223.

The state 1223 is a state of obtaining a high-order bit addressparameter. If in the state 1223 the command CMD23 is received again,this indicates that the previously received command CMD22 fails. The SDmemory card 100 switches from the state 1223 into the state 1222. If inthe state 1223 other commands are received, the SD memory card 100enters the state 1260. When entering the state 1260, the SD memory card100 is arranged to go back to the data transfer state 1200. If in thestate 1223 the command CMD18/25 is received, this indicates that the SDmemory card 100 currently receives 32 least significant bits of a 64-bitlength logical address carried by the command CMD18/25. In thissituation, the SD memory card 100 switches to the state 1224 which is astate of obtaining a low-order bit address parameter. Then the SD memorycard 100 enters the state 1250 from the state 1224. If the SD memorycard 100 receives the 32 most significant bits and 32 least significantbits of the 64-bit length logical address, the controller 120 in thestate 1250 is arranged to perform a designation data length read/writeoperation upon the flash memory 110 based on the 64-bit length logicaladdress.

If the SD memory card 100 in the state 1222 receives the commandCMD18/25, this indicates that the SD memory card 100 merely receives a32-bit length address and then enters the state 1224. Then the SD memorycard 100 switches from the state 1224 into the state 1250. In the state1250 the controller 120 is arranged to perform a designation data lengthread/write operation upon the flash memory 110 based on a 32-bit lengthlogical address.

If in the state 1200 the command CMD32 is received, this indicates thatthe SD memory card 100 receives 32-bit address parameter carried by thecommand CMD32 (the 32-bit address parameter may mean a 32-bit lengthlogical start address or 32 least significant bits of a 64-bit lengthlogical start address). The SD memory card 100 in this situation entersthe state 1212 which is a state of obtaining 32 bits of a logical startaddress. Then the SD memory card 100 enters the state 1214 which is astate of waiting address information.

If in the state 1214 the command CMD33 is received, then this indicatesthat the SD memory card 100 receives 32-bit address parameter carried bythe command CMD33 (the 32-bit address parameter may mean a 32-bit lengthlogical end address or 32 least significant bits of a 64-bit lengthlogical end address). The SD memory card 100 in this situation entersthe state 1216 which is a state of obtaining 32 bits of a logical endaddress. If the command CMD38 is received subsequently, the SD memorycard 100 enters the state 1218 which is a state of get an executionoperation. Thus, if the SD memory card 100 sequentially passes throughthe states 1212, 1214, 1216, and 1218, then the controller 120 isarranged to perform an erase operation upon the flash memory 110 basedon the 32-bit length logical start address and the 32-bit length logicalend address.

If in the state 1214 the command CMD22 is received, then this indicatesthat the SD memory card 100 receives the 32-bit length address parametercarried by the command CMD22. Since the SD memory card 100 has switchedfrom the state 1212 into the state 1214, so the controller 120 candetermine that the command CMD22 received in the state 1214 carries the32 most significant bits of a 64-bit length logical end address and thenenters the state 1215 which is a state of obtaining 32 most significantbits of the 64-bit length logical end address. If in the state 1215 thecommand CMD22 is received again, this indicates that the host device 105would like to update the 32 most significant bits of the 64-bit lengthlogical end address. The SD memory card 100 is arranged to update the 32most significant bits of the 64-bit length logical end address afterreceiving the new command CMD22.

If in the state 1215 the command CMD33 is received, this indicates thatthe SD memory card 100 receives the 32-bit length address parametercarried by the command CMD33 (the 32-bit length address parameter is the32 least significant bits of the 64-bit length logical end address) andthen in this situation enters the state 1216 which is a state ofobtaining 32 bits of the logical end address. If the command CMD38 isreceived subsequently, the SD memory card 100 enters the state 1218which is the state of obtaining an execution operation. Thus, if the SDmemory card 100 sequentially passes through the states 1202, 1212, 1214,1215, 1216, and 1218, then the controller 120 is arranged to perform adata erase operation upon the flash memory 110 according to the 64-bitlength logical start address and the 64-bit length logical end address.

It should be noted that, if in any of the states 1202, 1222, 1223, 1214,1215, and 1216 an unexpected command (other commands different from theabove-mentioned commands) is received, then the SD memory card 100 isarranged to switch into the state 1260 and then goes back to the datatransfer state 1200.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. A flash memory controller used in a securedigital (SD) memory card, the flash memory controller configured tocouple to a flash memory within the SD memory card via an internal busof the SD memory card, the flash memory controller configured to connectto a SD memory card driving circuit of a host device via at least onefirst external signal port of the SD memory card and at least one secondexternal signal port of the host device, and the flash memory controllercomprises: a processing circuit, used for: receiving a first command anda first partial address parameter sent from the SD memory card drivingcircuit by the host device wherein the first command and the firstpartial address parameter are transmitted via the at least one secondexternal signal port and a CMD pin of an SD mode of the at least onefirst external signal port of the SD memory card sequentially; receivinga second command and a second partial address parameter sent from the SDmemory card driving circuit by the host device wherein the secondcommand and the second partial address parameter are transmitted via theat least one second external signal port and the CMD pin of the SD modeof the at least one first external signal port of the SD memory cardsequentially; combining to obtain a complete address parameter accordingto the first partial address parameter and the second partial addressparameter; and performing a processing operation upon the flash memoryof the SD memory card via the internal bus according to the completeaddress parameter and a command type of the second command, theprocessing operation corresponding to the command type; wherein thefirst command is one of commands CMD22, CMD31, CMD39, CMD41, and CMD51;the command type of the second command comprises a single data unit readof CMD 17, a single data unit write of CMD24, a multiple data unit readof CMD18, a multiple data unit write of CMD25, a command queue taskassignment of CMD44 or CMD45, and a block erase of CMD32, CMD33, orCMD38; the first partial address parameter is a portion of mostsignificant bits of the complete address parameter, and the secondpartial address parameter is a portion of least significant bits of thecomplete address parameter; when receiving a start bit ‘0’ and atransmission bit ‘1’ at the CMD pin of the SD mode of the at least onefirst external signal port, the processing circuit is arranged fordetermining whether the host device is sending a command content of aspecific command from the SD memory card driving circuit to the SDmemory card and is used for receiving information of a command type andan address parameter formed by multiple bits of the command content ofthe specific command after receiving the transmission bit ‘1’.
 2. Theflash memory controller of claim 1, wherein the processing circuit isused for: receiving the first command and a first 32-bit length logicaladdress sent from the SD memory card driving circuit by the host device,the first command and the first 32-bit length logical address beingtransmitted via the at least one second external signal port and the CMDpin of the SD mode of the at least one first external signal port of theSD memory card sequentially; receiving a write command CMD24 or CMD25and a second 32-bit length logical address sent from the SD memory carddriving circuit by the host device, the write command CMD24 or CMD25 andthe second 32-bit length logical address being transmitted via the atleast one second external signal port and the CMD pin of the SD mode ofthe at least one first external signal port of the SD memory cardsequentially; receiving at least one data unit corresponding to a 64-bitlength logical address sent from SD memory card driving circuit by thehost device, the at least one data unit being transmitted via the atleast one second external signal port and multiple data line pins of theSD mode of the at least one first external signal port of the SD memorycard; combining to obtain the 64-bit length logical address according tothe first 32-bit length logical address and the second 32-bit lengthlogical address; and writing the at least one data unit into the flashmemory via the internal bus according to the 64-bit length logicaladdress and the write command.
 3. The flash memory controller of claim2, wherein before receiving first command and the first 32-bit lengthlogical address which are sent from the SD memory card driving circuitby the host device via the at least one second external signal port andthe CMD pin of the SD mode of the at least one first external signalport of the SD memory card, the processing circuit is arranged forreceiving an indication command and a designation write data lengthparameter which are sent from the SD memory card driving circuit by thehost device, the indication command and the designation write datalength parameter are transmitted via the at least one second externalsignal port and the CMD pin of the SD mode of the at least one firstexternal signal port of the SD memory card sequentially.
 4. The flashmemory controller of claim 1, wherein the processing circuit is usedfor: receiving the first command and a first 32-bit length logicaladdress sent from the SD memory card driving circuit by the host device,the first command and the first 32-bit length logical address beingtransmitted via the at least one second external signal port and the CMDpin of the SD mode of the at least one first external signal port of theSD memory card sequentially; receiving a read command CMD17 or CMD18 anda second 32-bit length logical address sent from the SD memory carddriving circuit by the host device, the read command and the second32-bit length logical address being transmitted via the at least onesecond external signal port and the CMD pin of the SD mode of the atleast one first external signal port of the SD memory card sequentially;and combining to obtain the 64-bit length logical address according tothe first 32-bit length logical address and the second 32-bit lengthlogical address; wherein the processing circuit is arranged forobtaining at least one data unit transmitted from the flash memory viathe internal bus according to the 64-bit length logical address and theread command CMD17 or CMD18, and then for transmitting the at least onedata unit to the host device, the at least one data unit beingtransmitted to the SD memory card driving circuit via multiple data linepins of the SD mode of the at least one first external signal port andthe at least one second external signal port sequentially.
 5. The flashmemory controller of claim 4, wherein before receiving the first commandand the first 32-bit length logical address sent from the SD memory carddriving circuit by the host device via the at least one second externalsignal port and the CMD pin of the SD mode of the at least one firstexternal signal port of the SD memory card sequentially, the processingcircuit is arranged for receiving an indication command and adesignation read data length parameter which are sent from the SD memorycard driving circuit by the host device, the indication command and thedesignation read data length parameter are transmitted via the at leastone second external signal port and the CMD pin of the SD mode of the atleast one first external signal port of the SD memory card sequentially.6. The flash memory controller of claim 1, wherein the processingcircuit is used for: receiving the first command and a first 32-bitlength logical address sent from the SD memory card driving circuit bythe host device, the first command and the first 32-bit length logicaladdress being transmitted sequentially via the at least one secondexternal signal port and the CMD pin of the SD mode of the at least onefirst external signal port of the SD memory card; receiving an erasecommand CMD32 or CMD33 and a second 32-bit length logical address sentfrom the SD memory card driving circuit by the host device, the erasecommand CMD32 or CMD33 and the second 32-bit length logical addressbeing transmitted sequentially via the at least one second externalsignal port and the CMD pin of the SD mode of the at least one firstexternal signal port; receiving an erase command CMD38 sent from the SDmemory card driving circuit by the host device; combining to obtain adesignation erase start address parameter of a 64-bit length logicaladdress according to the first 32-bit length logical address and thesecond 32-bit length logical address; and performing an erase operationupon at least one block corresponding to a designation erase segmentindicated by the 64-bit length logical address in the flash memory viathe internal bus according to the 64-bit length logical address and theerase command CMD32, CMD33, or CMD38.
 7. The flash memory controller ofclaim 1, wherein the processing circuit is used for: receiving a firsttransfer command CMD44 and at least one transfer parameter sent from theSD memory card driving circuit by the host device, the first transfercommand CMD44 and the at least one transfer parameter being transmittedsequentially via the at least one second external signal port and theCMD pin of the SD mode of the at least one first external signal port ofthe SD memory card; receiving the first command and a first 32-bitlength logical address sent from the SD memory card driving circuit bythe host device, the first command and the first 32-bit length logicaladdress being transmitted sequentially via the at least one secondexternal signal port and the CMD pin of the SD mode of the at least onefirst external signal port of the SD memory card; receiving a secondtransfer command CMD45 and a second 32-bit length logical address sentfrom the SD memory card driving circuit by the host device, the secondtransfer command CMD45 and the second 32-bit length logical addressbeing transmitted sequentially via the at least one second externalsignal port and the CMD pin of the SD mode of the at least one firstexternal signal port of the SD memory card; combining to obtain adesignation transfer start address parameter of a 64-bit length logicaladdress according to the first 32-bit length logical address and thesecond 32-bit length logical address; and transferring correspondingdata of the flash memory from an address indicated by the designationtransfer start address parameter via the internal bus according to the64-bit length logical address and the at least one transfer parameter.8. A SD memory card, comprising: a flash memory; and the flash memorycontroller of claim
 1. 9. A method used in a flash memory controller ofa SD memory card, the flash memory controller configured to couple to aflash memory within the SD memory card via an internal bus of the SDmemory card, the flash memory controller configured to connect to a SDmemory card driving circuit of a host device via at least one firstexternal signal port of the SD memory card and at least one secondexternal signal port of the host device, and the method comprises:receiving a first command and a first partial address parameter sentfrom the SD memory card driving circuit by the host device wherein thefirst command and the first partial address parameter are transmittedvia the at least one second external signal port and a CMD pin of an SDmode of the at least one first external signal port of the SD memorycard sequentially; receiving a second command and a second partialaddress parameter sent from the SD memory card driving circuit by thehost device wherein the second command and the second partial addressparameter are transmitted via the at least one second external signalport and the CMD pin of the SD mode of the at least one first externalsignal port of the SD memory card sequentially; combining to obtain acomplete address parameter according to the first partial addressparameter and the second partial address parameter; and performing aprocessing operation upon the flash memory of the SD memory card via theinternal bus according to the complete address parameter and a commandtype of the second command, the processing operation corresponding tothe command type; wherein the first command is one of commands CMD22,CMD31, CMD39, CMD41, and CMD51; the command type of the second commandcomprises a single data unit read of CMD 17, a single data unit write ofCMD24, a multiple data unit read of CMD18, a multiple data unit write ofCMD25, a command queue task assignment of CMD44 or CMD45, and a blockerase of CMD32, CMD33, or CMD38; the first partial address parameter isa portion of most significant bits of the complete address parameter,and the second partial address parameter is a portion of leastsignificant bits of the complete address parameter; and the methodfurther comprises: determining whether the host device is sending acommand content of a specific command from the SD memory card drivingcircuit to the SD memory card when receiving a start bit ‘0’ and atransmission bit ‘1’ at the CMD pin of the SD mode of the at least onefirst external signal port; and receiving information of a command typeand an address parameter formed by multiple bits of the command contentof the specific command after receiving the transmission bit ‘1’. 10.The method of claim 9, wherein the first partial address parameter is afirst 32-bit length logical address, the second command is a writecommand CMD24 or CMD25; the second partial address parameter is a second32-bit length logical address; and the method further comprises:receiving at least one data unit corresponding to a 64-bit lengthlogical address sent from the SD memory card driving circuit by the hostdevice, the at least one data unit being transmitted via the at leastone second external signal port and multiple data line pins of the SDmode of the at least one first external signal port of the SD memorycard; combining to obtain the 64-bit length logical address according tothe first 32-bit length logical address and the second 32-bit lengthlogical address; and writing the at least one data unit into the flashmemory via the internal bus according to the 64-bit length logicaladdress and the write command.
 11. The method of claim 10, furthercomprising: before receiving the first command and the first 32-bitlength logical address which are sent from the SD memory card drivingcircuit by the host device via the at least one second external signalport and the CMD pin of the SD mode of the at least one first externalsignal port of the SD memory card, receiving an indication command and adesignation write data length parameter which are sent from the SDmemory card driving circuit by the host device, the indication commandand the designation write data length parameter are transmitted via theat least one second external signal port and the CMD pin of the SD modeof the at least one first external signal port of the SD memory cardsequentially.
 12. The method of claim 9, wherein the first partialaddress parameter is a first 32-bit length logical address, and thesecond command is a read command CMD17 or CMD18; the second partialaddress parameter is a second 32-bit length logical address; and themethod further comprises: combining to obtain the 64-bit length logicaladdress according to the first 32-bit length logical address and thesecond 32-bit length logical address; obtaining at least one data unittransmitted from the flash memory via the internal bus according to the64-bit length logical address and the read command CMD17 or CMD18; andtransmitting the at least one data unit to the host device, the at leastone data unit being transmitted to the SD memory card driving circuitvia multiple data line pins of the SD mode of the at least one firstexternal signal port and the at least one second external signal portsequentially.
 13. The method of claim 12, further comprising: beforereceiving the first command and the first 32-bit length logical addresssent from the SD memory card driving circuit by the host device via theat least one second external signal port and the CMD pin of the SD modeof the at least one first external signal port of the SD memory cardsequentially, receiving an indication command and a designation readdata length parameter which are sent from the SD memory card drivingcircuit by the host device, the indication command and the designationread data length parameter are transmitted via the at least one secondexternal signal port and the CMD pin of the SD mode of the at least onefirst external signal port of the SD memory card sequentially.
 14. Themethod of claim 9, wherein the first partial address parameter is afirst 32-bit length logical address; the second command is an erasecommand CMD32, CMD33, or CMD38, and the second partial address parameteris a second 32-bit length logical address; and the method furthercomprises: combining to obtain a designation erase start addressparameter of a 64-bit length logical address according to the first32-bit length logical address and the second 32-bit length logicaladdress; and performing an erase operation upon at least one blockcorresponding to a designation erase segment indicated by the 64-bitlength logical address in the flash memory via the internal busaccording to the 64-bit length logical address and the erase commandCMD32, CMD33, or CMD38.
 15. The method of claim 9, wherein the firstpartial address parameter is a first 32-bit length logical address; thesecond command is a second transfer command CMD45, and the secondpartial address parameter is a second 32-bit length logical address; andthe method further comprises: receiving a first transfer command CMD44and a at least one transfer parameter sent from the SD memory carddriving circuit by the host device, the first transfer command CMD44 andthe at least one transfer parameter being transmitted sequentially viathe at least one second external signal port and the CMD pin of the SDmode of the at least one first external signal port of the SD memorycard; combining to obtain a designation transfer start address parameterof a 64-bit length logical address according to the first 32-bit lengthlogical address and the second 32-bit length logical address; andtransferring corresponding data of the flash memory from an addressindicated by the designation transfer start address parameter via theinternal bus according to the 64-bit length logical address and the atleast one transfer parameter.
 16. A host device for accessing a SDmemory card, the host device configured to couple to a flash memory anda flash memory controller within the SD memory card via a SD memory carddriving circuit of the host device, at least one second external signalport of the host device, at least one first external signal port of theSD memory card, and an internal bus of the SD memory card; and, the hostdevice comprises: the SD memory card driving circuit; and a processor,coupled to the SD memory card driving circuit, configured for:controlling the SD memory card driving circuit to send a first commandand a first partial address parameter to the SD memory card, the firstcommand and the first partial address parameter being transmitted to theflash memory controller sequentially via the at least one secondexternal signal port and a CMD pin of an SD mode of the at least onefirst external signal port of the SD memory card; controlling the SDmemory card driving circuit to send a second command and a secondpartial address parameter to the SD memory card, the second command andthe second partial address parameter being transmitted to the flashmemory controller sequentially via the at least one second externalsignal port and the CMD pin of the SD mode of the at least one firstexternal signal port of the SD memory card; and controlling the SDmemory card driving circuit to send the first partial address parameterand the second partial address parameter, to make the flash memorycontroller combine and obtain a complete address parameter according tothe first partial address parameter and the second partial addressparameter and to make the flash memory controller perform a processingoperation upon the flash memory via the internal bus according to thecomplete address parameter and a command type of the second command, theprocessing operation corresponding to the command type; wherein thefirst command is one of commands CMD 22, CMD31, CMD39, CMD41, and CMD51;the command type of the second command at least comprises a single dataunit read of CMD17, a single data unit write of CMD24, a multiple dataunit read of CMD18, a multiple data unit write of CMD25, a command queuetask assignment of CMD44 or CMD45, and a data unit erase of CMD32,CMD33, or CMD38; the first partial address parameter is a portion ofmost significant bits of the complete address parameter, and the secondpartial address parameter is a portion of least significant bits of thecomplete address parameter; the SD memory card driving circuit isarranged to sequentially send a start bit ‘0’ and a transmission bit ‘1’to the SD memory card via the CMD pin of the SD mode of the at least onefirst external signal port, to make the flash memory controller receivethe start bit ‘0’ and the transmission bit ‘1’ via the CMD pin of the SDmode of the at least one first external signal port to determine whetherthe host device is sending a command content of a specific command fromthe SD memory card driving circuit to the SD memory card and to make theflash memory controller receive information of a command type and anaddress parameter formed by multiple bits of the command content of thespecific command after receiving the transmission bit ‘1’.